4.6 Article

BaBiO3: A potential absorber for all-oxide photovoltaics

期刊

MATERIALS LETTERS
卷 210, 期 -, 页码 218-222

出版社

ELSEVIER
DOI: 10.1016/j.matlet.2017.09.038

关键词

Thin-film; Oxide photovoltaics; XPS; Energy-band offset

资金

  1. U.S.-India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India and the United States (SERIIUS)
  2. U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Efficiency and Renewable Energy, Solar Energy Technology Program) [DE-AC36-08GO28308]
  3. Government of India, through Department of Science and Technology
  4. Department of Science and Technology [SR/S3/ME/045/2007]
  5. Visvesvaraya PhD Scheme for Electronics and IT by Ministry of Electronics & Information Technology (MeitY), Government of India

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BaBiO3 is presented as a potential absorber for all-oxide solar cells. Thin-films of BaBiO3 were deposited by pulsed laser deposition. As-deposited thin-films were amorphous, but a rapid thermal anneal at 600 degrees C for 10 min yields polycrystalline thin-films. X-ray photoelectron spectroscopy measurements show that deposited films have Barium in Ba-12 state and bismuth in both Bi-13 and Bi-15 state. UV-Vis spectrophotometer (UV-Vis) shows that BaBiO3 films have direct and indirect bandgap (E-g) of 2.25 eV and 2.02 eV respectively, while ultraviolet photoelectron spectroscopy (UPS) shows that valence band maxima (E-V), conduction band minima (E-C) and work-function (phi) of BaBiO3 is at 5.82 eV, 3.8 eV and 4.22 eV respectively. BaBiO3 thin-film devices with a FTO/c-TiO2/BaBiO3/Au structure show rectifying current-voltage characteristics in dark. Under illumination, a photo response with a J(light)/J(dark) ratio of 1.75 is observed. (C) 2017 Elsevier B.V. All rights reserved.

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