期刊
MATERIALS LETTERS
卷 210, 期 -, 页码 218-222出版社
ELSEVIER
DOI: 10.1016/j.matlet.2017.09.038
关键词
Thin-film; Oxide photovoltaics; XPS; Energy-band offset
资金
- U.S.-India Partnership to Advance Clean Energy-Research (PACE-R) for the Solar Energy Research Institute for India and the United States (SERIIUS)
- U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences, and Energy Efficiency and Renewable Energy, Solar Energy Technology Program) [DE-AC36-08GO28308]
- Government of India, through Department of Science and Technology
- Department of Science and Technology [SR/S3/ME/045/2007]
- Visvesvaraya PhD Scheme for Electronics and IT by Ministry of Electronics & Information Technology (MeitY), Government of India
BaBiO3 is presented as a potential absorber for all-oxide solar cells. Thin-films of BaBiO3 were deposited by pulsed laser deposition. As-deposited thin-films were amorphous, but a rapid thermal anneal at 600 degrees C for 10 min yields polycrystalline thin-films. X-ray photoelectron spectroscopy measurements show that deposited films have Barium in Ba-12 state and bismuth in both Bi-13 and Bi-15 state. UV-Vis spectrophotometer (UV-Vis) shows that BaBiO3 films have direct and indirect bandgap (E-g) of 2.25 eV and 2.02 eV respectively, while ultraviolet photoelectron spectroscopy (UPS) shows that valence band maxima (E-V), conduction band minima (E-C) and work-function (phi) of BaBiO3 is at 5.82 eV, 3.8 eV and 4.22 eV respectively. BaBiO3 thin-film devices with a FTO/c-TiO2/BaBiO3/Au structure show rectifying current-voltage characteristics in dark. Under illumination, a photo response with a J(light)/J(dark) ratio of 1.75 is observed. (C) 2017 Elsevier B.V. All rights reserved.
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