Atomic layer deposition of thin oxide films for resistive switching

Atomic layer deposition was used for preparation of TiO2 and HfO2 thin films for resistive switching in metal-insulator-metal structures with Pt and TiN top and bottom electrodes, respectively. To obtain stable bipolar resistive switching loops in TiO2-based structures Al2O3 barrier with the thickness of 3 - 5 nm was necessary. HfO2-based structures with the insulator thickness less than 10 nm exhibited stable bipolar resistive switching. Ratio between high resistivity and low resistivity state varied between 20 and 100 depending on structure preparation and composition as well as on parameters of DC current - voltage measurement. Resistive switching effect was demonstrated in metal-insulator-metal structures with HfO2 layers thickness below 3 nm.