期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 36, 期 3, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.5026777
关键词
-
资金
- Samsung Electronics
Optical emission spectroscopy was used to investigate the effect of Y2O3, YOF, and YF3 chamber wall coatings on the relative number densities of gaseous species during etching of Si in Cl-2/Ar inductively coupled plasmas. Etching plasmas were alternated with NF3/Ar plasma chambercleaning steps. Small differences were found for the three materials. Si-to-Cl emission ratios were similar for Y2O3 and YOF, and somewhat larger for YF3. SiClx-1 (3) emissions were similar for the Y2O3 and YOF-coated liners, but significantly less stable with time for YF3. Compared with Cl-2/Ar plasmas, Cl-2/O-2/Ar plasmas produced nearly time-independent and much more consistent Cl number densities during etching. This takes place despite a consistent upward drift in SiClx=0 (3) emissions for all three materials. A conditioning procedure for the YOF coating was shown to reduce drift during Si etching in Cl-2 plasmas. Specifically, a Cl-2/O-2/Ar plasma pretreatment was briefly operated with substrate bias, generating SiClx etching products that rapidly remove F from the liner surface. When the O-2 flow was extinguished, etching continued with much less changes in Cl and SiClx relative number densities. Published by the AVS.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据