期刊
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
卷 26, 期 3, 页码 121-127出版社
WILEY
DOI: 10.1002/jsid.640
关键词
quantum dots; light-emitting diodes; color patterning; high resolution; photolithography
类别
资金
- National Natural Science Foundation of China [61775090]
- Guangdong Special Funds for Science and Technology Development [2017A050506001]
- Basic Research Program of Science, Technology and Innovation Commission of Shenzhen Municipality [JCYJ20170307105259290]
- Guangdong Natural Science Funds for Distinguished Young Scholars [2016A030306017]
- National Key R&D Program of China [2016YFB0401702]
- Shenzhen Peacock Plan [KQTD2015071710313656]
Quantum dot light-emitting diodes are promising candidates for next generation displays. For display application, a pixel consists of red (R), green (G), and blue (B) side-by-side sub-pixels, which thereby requires a high resolution patterning of the light-emission layers. In this work, the quantum dot (QD) light-emitting layers are fine patterned by using the photolithography and the lift-off techniques. To facilitate the lift-off process, reverse photoresist AZ5214E is used because of its special inverted trapezoidal structure after developing. To prevent the QDs being washed off during the lift-off process, the ZnMgO layer is treated by the hydrophobic material hexamethyldisilazane. With hexamethyldisilazane treatment, the adhesion between the QDs and the ZnMgO is effectively improved. As a result, side-by-side R/G/B QD with pixel size of 30mx120m is successfully achieved. After patterning, the R, G, and B-quantum dot light-emitting diodes exhibit a maximum current efficiency of 11.6cd/A, 29.7cd/A, and 1.5cd/A, respectively. This work confirms the feasibility of patterning QDs by using the photolithography and the lift-off techniques.
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