期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 72, 期 9, 页码 1073-1077出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.72.1073
关键词
Flexible; Transparent; oxide; Thin film transistor; Enhancement-load inverter
资金
- Ministry of Trade, Industry and Energy (MOTIE)
- Korea Institute for Advancement of Technology (KIAT) [N0001783]
- Industry Technology R&D program of MOTIE/KEIT [10063316]
- Korea Evaluation Institute of Industrial Technology (KEIT) [N0001783] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report on the transparent and flexible enhancement-load inverters which consist of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated at low process temperature. To control the electrical characteristics of oxide TFTs by oxygen vacancies, we applied low-pressure oxygen rapid thermal annealing (RTA) process to our devices. When we annealed the ZTO TFTs in oxygen ambient of 2 Torr, they showed better electrical characteristics than those of the devices annealed in the air ambient of 760 Torr. To realize oxide thin film transistor and simple inverter circuits on flexible substrate, we annealed the devices in O-2 of 2 Torr at 150 degrees C and could achieve the decent electrical properties. When we used transparent conductive oxide electrodes such as indium zinc oxide (IZO) and indium tin oxide (ITO), our transparent and flexible inverter showed the total transmittance of similar to 68% in the visible range and the voltage gain of similar to 5. And the transition voltage in voltage transfer curve was located well within the range of operation voltage.
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