期刊
出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/05401.0255ecst
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- Office of Naval Research [N000 14-10-1-0489]
- National Science Foundation [DMR-1207342]
- Air Force Office of Scientific Research [FA9550-12-10494]
- Texas Advanced Computing Center
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1207342] Funding Source: National Science Foundation
Integration of functional oxides with semiconductors opens ways of creating novel hybrid architectures. However, epitaxy of these different types of materials brings challenges unlike those encountered in traditional semiconductor epitaxy. In this paper we will discuss our recent work on monolithic integration of perovskite oxides SrTiO3 and BaTiO3 on Si(001) and Ge(001), and the use of these pseudosubstrates to integrate other functional oxides using molecular beam epitaxy (MBE) and atomic layer deposition (ALD).
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