4.8 Article

Multistates and Polyamorphism in Phase-Change K2Sb8Se13

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 140, 期 29, 页码 9261-9268

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jacs.8b05542

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资金

  1. MRSEC program at the Materials Research Center [NSF DMR-1720139]
  2. Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF ECCS-1542205]
  3. International Institute for Nanotechnology (IIN)
  4. Keck Foundation
  5. State of Illinois, through the IIN
  6. U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-AC02-06CH11357]
  7. E.I. DuPont de Nemours Co.
  8. Dow Chemical Company
  9. Northwestern University
  10. U.S. Department of Energy [W-7405-Eng-82]
  11. APS [W-31-109-Eng-38]
  12. NSF
  13. Office of Science of the US Department of Energy [DE-AC02-05CH11231]

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The phase-change (PC) materials in the majority of optical data storage media in use today exhibit a fast, reversible crystal -> amorphous phase transition that allows them to be switched between on (1) and off (0) binary states. Solid-state inorganic materials with this property are relatively common, but those exhibiting an amorphous -> amorphous transition called polyamorphism are exceptionally rare. K2Sb8Se13 (KSS) reported here is the first example of a material that has both amorphous -> amorphous polyamorphic transition and amorphous -> crystal transition at easily accessible temperatures (227 and 263 degrees C, respectively). The transitions are associated with the atomic coordinative preferences of the atoms, and all three states of K2Sb8Se13 are stable in air at 25 degrees C and 1 atm. All three states of K2Sb8Se13 exhibit distinct optical bandgaps, E-g = 1.25, 1.0, and 0.74 eV, for the amorphous-II, amorphous-I, and crystalline versions, respectively. The room-temperature electrical conductivity increases by more than 2 orders of magnitude from amorphous-I to -II and by another 2 orders of magnitude from amorphous-II to the crystalline state. This extraordinary behavior suggests that a new class of materials exist which could provide multistate level systems to enable higher-order computing logic circuits, reconfigurable logic devices, and optical switches.

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