期刊
28TH EUROPEAN CONFERENCE ON SOLID-STATE TRANSDUCERS (EUROSENSORS 2014)
卷 87, 期 -, 页码 100-103出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.proeng.2014.11.392
关键词
ICP-PECVD; Silicon nitride; X-ray photoelectron spectroscopy; Infrared spectroscopy; Residual Stress
Based on a systematic variation of the gas flow ratio of silane (SiH4) and nitrogen (N-2), amorphous hydrogenated silicon nitride (a-SiNx:H) thin films are synthesized with an inductively coupled plasma enhanced chemical vapour deposition (ICP-PECVD) technique offering a low (< 50 MPa) film stress in combination with a negligible drift behaviour. Most recently, two dominating regimes were identified, characterized by either high, but stable compressive stress or low stress, but with a strong drift behaviour. A rapid change in chemical composition at the transition point promotes the oxidation of the layer in the latter case causing the drift, and is confirmed by the corresponding change of the refractive index n, as well as FT-IR (Fourier -Transform Infrared Spectroscopy) and XPS (X-ray Photoelectron Spectroscopy) measurements. 2014 The Authors. Published by Eslevier Ltd. This is an open access article under the CC BY-NC-ND license
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