期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 51, 期 6, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/aaa4a2
关键词
zinc oxide; plasma-enhanced atomic layer deposition; Schottky diode; rectifier
资金
- United Kingdom Engineering and Physical Research Council (EPSRC) Grant [EP/K018884/1, EP/N021258/1]
- EPSRC
- EPSRC [EP/N021258/1, EP/K018884/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/N021258/1, EP/K018884/1] Funding Source: researchfish
Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17 x 10(7), and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13 x 10(12) cm(-2) eV(-1), and the noise is dominated by the mechanism of a random walk of electrons at the PtOx/ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.
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