Physics of charge transport in metal monopolar (n- or p-type) semiconductor metal structures

Equations and boundary conditions for charge transport in a monopolar semiconductor of finite size with metal contacts are formulated. It is shown that metal-p-type semiconductor contacts are essentially different from those made with n-type semiconductors. Furthermore, it is shown that the bulk space charge established over distances on the order of the Debye length does notinfluence the current-voltage characteristics of a semiconductor device operating in a linear mode.