期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 118, 期 -, 页码 14-20出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2018.02.047
关键词
Monopolar transport phenomena; Schottky diode; Ohmic contacts
资金
- CONACYT - Mexico
- Proyecto SIP-Instituto Politecnico Nacional [20170633]
Equations and boundary conditions for charge transport in a monopolar semiconductor of finite size with metal contacts are formulated. It is shown that metal-p-type semiconductor contacts are essentially different from those made with n-type semiconductors. Furthermore, it is shown that the bulk space charge established over distances on the order of the Debye length does notinfluence the current-voltage characteristics of a semiconductor device operating in a linear mode.
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