期刊
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
卷 118, 期 -, 页码 211-220出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2018.03.009
关键词
Semiconductors; Thin films; Optical properties; Luminescence; Electrical properties
资金
- Department of Science and Technology, New Delhi, India [(DST-SERB) (SB/FTP/PS-131/2013)]
- Deanship of Scientific Research at King Khalid University through Research Groups Program [R.G.P.2/37/39]
High quality Cadmium oxide thin films doped with Praseodymium (Pr) were prepared using perfume atomizer based spray pyrolysis technique at substrate temperature near 350 degrees C. Structural analysis of films was examined by XRD and confirmed that the films are cubic in structure. All un-doped and doped films were good crystalline in nature with smooth and flat surface without significant modifications owed to doping. Optical transmittances of doped films was decrease in the visible and IR range with increasing Pr doping concentration. Band gap widened from 2.42 to 2.20 eV when doped with Pr from 0 to 5 at. %. In addition, the photoluminescence property of the films was also observed. Further, the electrical studies were performed on pure and doped samples Viz., the electrical resistivity, carrier concentration (rho) and Hall mobility (mu). It confirmed that the deposited films has good structural environments in terms of grain size, absolute stress correspond and low resistivity. Current-voltage measurements on the nanostructured Al/Pr-nCdO/p-Si/Al device showed a nonlinear electric characteristics indicating diode like behavior.
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