期刊
JOURNAL OF ORGANIC CHEMISTRY
卷 83, 期 10, 页码 5506-5515出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.joc.8b00483
关键词
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资金
- ACT-C, JST, Japan [JPMJCR12YW]
- MEXT, Japan [15H00751]
- JSPS KAKENHI [JP16J02003]
- Grants-in-Aid for Scientific Research [15H00751] Funding Source: KAKEN
Four bis [1]benzothieno [6,7-d:6',7'-d'] [1,2-b:4,5-b'] dithiophene (BBTBDT) derivatives bearing substituents on the molecular long axis were synthesized, and their transistor performance was evaluated. Among the obtained compounds, OFET devices based on the 2,9-diphenyl-substituted derivative (Id) on a beta-PTS-modified Si/SiO2 substrate yielded the best morphological and crystalline structures, resulting in the highest hole mobility, as high as 0.16 cm(2) V-1 s(-1), and a low threshold voltage of 8 V. In the solid state, id formed a highly ordered and crystalline edge-on structure, which facilitated effective carrier transport. The detailed structure property relationships were also disclosed by GIWAXS analysis, atomic force microscopy measurements, and theoretical calculations.
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