期刊
JOURNAL OF NUCLEAR MATERIALS
卷 501, 期 -, 页码 217-223出版社
ELSEVIER
DOI: 10.1016/j.jnucmat.2018.01.037
关键词
C-Si coedeposition layers; D retention; RF magnetron sputtering
资金
- National Key Research and Development Plan Program [2017YFA0402503]
- National Nature Science Foundation of China [11375046]
Deuterated carbon-silicon layers co-deposited on graphite and silicon substrates by radio frequency magnetron sputtering in pure D-2 plasma were produced to study deuterium trapping and characteristics of the C-Si layers. The C-Si co-deposited layers were examined by ion beam analysis (IBA), Raman spectroscopy (RS), infrared absorption (IR) spectroscopy, thermal desorption spectroscopy (TDS) and scanning electron microscopy (SEM). It was found that the growth rate of the C-Si co-deposition layer decreased with increasing temperature from 350 K to 800 K, the D concentration and C/Si ratios increased differently on graphite and silicon substrates. TDS shows that D desorption is mainly as D-2, HD, HDO, CD4, and C2D4 and release peaks occurred at temperatures of less than 900 K. RS and IR analysis reveal that the structure of the C-Si layers became more disordered with increasing temperatures. Rounded areas of peeling with 1-2 mu m diameters were observed on the surface. (c) 2018 Elsevier B.V. All rights reserved.
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