期刊
JOURNAL OF MOLECULAR STRUCTURE
卷 1160, 期 -, 页码 311-318出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.molstruc.2018.01.095
关键词
Thin films; Doping; Oxides semiconductors; Optical properties; Heterojunction devices; Electrical properties
资金
- DST, India, under the scheme of Science and Engineering Research Board (SERB). DST [SB/FTP/PS-131/2013]
- Research Centre for Advanced Materials Science - King Khalid University, Saudi Arabia
In this study, thin films of cadmium oxide (CdO) with different concentrations (0, 1, 3, and 5 wt%) of Eu doping were deposited onto Si and glass substrates by a novel and facile spray technique using simple perfume atomizer for the first time. Prepared films were characterized for structural, morphological, optical properties and the photo diode studies, using X-ray diffraction, scanning electron microscope, UV-Vis spectrophotometer, I-V characteristics, and fundamental parameters are reported. All the prepared Eu:CdO films exhibit cubic structure. The preferential orientation is along (200) plane. Scanning electron microscopy study indicates the growth of smooth and pin-hole free films with clusters of homogeneous grains. The values of band gap energy are found to be varying from 2.42 to 2.33 eV for various Eu doping concentration from 0 to 5 wt%. EDAX studies revealed the presence of Eu, Cd and O elements without any other impurities. FTIR spectra showed a peak at 575 cm(-1) confirming the stretching mode of Cd-O. The resistivity (rho), high carrier concentration (n) and carrier mobility (mu) for 3 wt% CdO thin film are found to be 0.452 x 10(-3)(Omega.cm), 17.82 x 10(20) cm(-3) and 7.757 cm(2)/V, respectively. Current-voltage measurements on the fabricated nanostructured Al/Eu-nCdO/p-Si/Al heterojunction device showed a non-linear electric characteristics indicating diode like behaviour. (C) 2018 Elsevier B.V. All rights reserved.
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