4.4 Article

Knudsen pump produced via silicon deep RIE, thermal oxidation, and anodic bonding processes for on-chip vacuum pumping

出版社

IOP PUBLISHING LTD
DOI: 10.1088/1361-6439/aaae26

关键词

Knudsen pump; silicon deep RIE; thermal oxidation; anodic bonding; vacuum pumping

资金

  1. JSPS KAKENHI for Young Scientists B [17K14095]
  2. [16K14189]
  3. Grants-in-Aid for Scientific Research [17K14095] Funding Source: KAKEN

向作者/读者索取更多资源

This work describes the fabrication and evaluation of the Knudsen pump for on-chip vacuum pumping that works based on the principle of a thermal transpiration. Three AFM (atomic force microscope) cantilevers are integrated into small chambers with a size of 5 mm x 3 mm x 0.4 mm for the pump's evaluation. Knudsen pump is fabricated using deep RIE (reactive ion etching), wet thermal oxidation and anodic bonding processes. The fabricated device is evaluated by monitoring the quality (Q) factor of the integrated cantilevers. The Q factor of the cantilever is increased from 300-1150 in cases without and with a temperature difference approximately 25 degrees C between the top (the hot side at 40 degrees C) and bottom (the cold side at 15 degrees C) sides of the fabricated device, respectively. The evacuated chamber pressure of around 10 kPa is estimated from the Q factor of the integrated cantilevers.

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