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D. S. Kim et al.
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M. W. D. Cooper et al.
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Application of the cBΩ model to the calculation of diffusion parameters of He in olivine
F. Vallianatos et al.
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Comment on LiH as a Li+ and H- ion provider by Khang Hoang, Chris G. Van de Walle, Solid State Ionics 253 (2013) 53
E. S. Skordas
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A. Chroneos et al.
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Experimental evidence of staggered oxygen dimers as a component of boron-oxygen complexes in silicon
Peng Chen et al.
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J. Lindroos et al.
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E. N. Sgourou et al.
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Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions
R. Kube et al.
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Fleur Legrain et al.
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Calculation of self-diffusion coefficients in diamond
Baohua Zhang et al.
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Eiji Kamiyama et al.
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A. Chroneos et al.
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R. Kube et al.
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F. Decremps et al.
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Intrinsic and extrinsic diffusion of indium in germanium
R. Kube et al.
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Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Shotaro Takeuchi et al.
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J. Garai et al.
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