期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 3, 页码 1527-1532出版社
AMER CHEMICAL SOC
DOI: 10.1021/am506601v
关键词
copper; thin film; grain growth; CVD graphene; evaporation
资金
- National Science Foundation
- Southwest Academy of Nanoelectronics (SWAN)
- NSF NASCENT NERC Center
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1150034] Funding Source: National Science Foundation
Thin metal films can be used to catalyze the growth of nanomaterials in place of the bulk metal, while greatly reducing the amount of material used. A big drawback of copper thin films (0.5-1.5 mu m thick) is that, under high temperature/vacuum synthesis, the mass loss of films severely reduces the process time due to discontinuities in the metal film, thereby limiting the time scale for controlling metal grain and film growth. In this work, we have developed a facile method, namely covered growth to extend the time copper thin films can be exposed to high temperature/vacuum environment for graphene synthesis. The key to preventing severe mass loss of copper film during the high temperature chemical vapor deposition (CVD) process is to have a cover piece on top of the growth substrate. This new covered growth method enables the high-temperature annealing of the copper film upward of 4 h with minimal mass loss, while increasing copper film grain and graphene domain size. Graphene was then successfully grown on the capped copper film with subsequent transfer for device fabrication. Device characterization indicated equivalent physical, chemical, and electrical properties to conventional CVD graphene. Our covered growth provides a convenient and effective solution to the mass loss issue of thin films that serve as catalysts for a variety of 2D material syntheses.
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