期刊
ACS APPLIED MATERIALS & INTERFACES
卷 7, 期 4, 页码 2512-2517出版社
AMER CHEMICAL SOC
DOI: 10.1021/am507410b
关键词
broken gap; tunnel transistors; InAs/GaSb; molecular beam epitaxy; heterointerface
资金
- National Science Foundation (NSF) [ECCS-1028494]
- Intel Corporation
- NSF [ECCS-1028494, ECCS-1348653]
- NSF Graduate Research Fellowship [DGE 0822220]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1348653] Funding Source: National Science Foundation
Broken-gap InAs/GaSb strain balanced multilayer structures were grown by molecular beam epitaxy (MBE), and their structural, morphological, and band alignment properties were analyzed. Precise shutter sequence during the MBE growth process, enable to achieve the strain balanced structure. Cross-sectional transmission electron microscopy exhibited sharp heterointerfaces, and the lattice line extended from the top GaSb layer to the bottom InAs layer. X-ray analysis further confirmed a strain balanced InAs/GaSb multilayer structure. A smooth surface morphology with surface roughness of similar to 0.5 nm was demonstrated. The effective barrier height -0.15 eV at the GaSb/InAs heterointerface was determined by X-ray photoelectron spectroscopy, and it was further corroborated by simulation. These results are important to demonstrate desirable characteristics of mixed As/Sb material systems for high-performance and low-power tunnel field-effect transistor applications.
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