4.5 Article

Experimental and Theoretical Investigations on Intermediate Band in Doped Nano-SnS2

期刊

JOURNAL OF ELECTRONIC MATERIALS
卷 47, 期 5, 页码 2945-2953

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SPRINGER
DOI: 10.1007/s11664-018-6153-5

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Doped; SnS2; structure; optical; DFT; anti-Stokes

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Nano-SnS2 and Sn0.75X0.25S2 (X = Cr, Fe, Y) have been prepared by thermolysis method. Phase analysis of x-ray diffraction data confirmed the single-phase nature of all prepared samples, with some residual carbon contributing to the background. Rietveld refinement revealed high anisotropy in crystallite size, signifying a cylindrical structure for the particle shape, as confirmed by transmission electron microscopy. The refined occupancies obtained for the doped cations were found to be smaller than the nominal target doping ratio (25%). Fourier-transform infrared spectra showed presence of Sn-S bond in all samples. The energy was found to be 3.42 eV, 3.33 eV, 2.1 eV and 3.14 eV, and 3.62 eV for undoped SnS2 and when doped with Cr, Fe, and Y, respectively. Density functional theory calculations illustrated that Fe-doped SnS2 has two bandgaps [normal and intermediate (IB) bands]. Meanwhile, Sn0.75Fe0.25S2 sample showed anti-Stokes and an extra photoluminescence peak related to the newly created intermediate band (IB) inside the energy gap. On the other hand, pure SnS2 and Sn0.75X0.25S2 (X = Cr, Y) samples emitted four photoluminescence subspectra in ultraviolet, violet, and blue regions.

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