期刊
JOURNAL OF ELECTRONIC MATERIALS
卷 47, 期 7, 页码 3474-3482出版社
SPRINGER
DOI: 10.1007/s11664-018-6187-8
关键词
Threading dislocations; graded buffer; L-MD model; GaAs; InGaAs; high electron mobility transistor (HEMT)
In order to evaluate various buffer layers for metamorphic devices, threading dislocation densities have been calculated for uniform composition In (x) Ga1-x As device layers deposited on GaAs (001) substrates with an intermediate graded buffer layer using the L (MD) model, where L (MD) is the average length of misfit dislocations. On this basis, we compare the relative effectiveness of buffer layers with linear, exponential, and S-graded compositional profiles. In the case of a 2 mu m thick buffer layer linear grading results in higher threading dislocation densities in the device layer compared to either exponential or S-grading. When exponential grading is used, lower threading dislocation densities are obtained with a smaller length constant. In the S-graded case, lower threading dislocation densities result when a smaller standard deviation parameter is used. As the buffer layer thickness is decreased from 2 mu m to 0.1 mu m all of the above effects are diminished, and the absolute threading dislocation densities increase.
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