4.2 Article

GaSb oxide thermal stability studied by dynamic-XPS

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A V S AMER INST PHYSICS
DOI: 10.1116/1.4878940

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  1. Semiconductor Research Corporation Focus Center on Materials Structures and Devices (MSD)
  2. Nanoelectronics Research Initiative (NRI) SWAN Center
  3. National Institute for Standards and Technology (NIST)

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The thermal decomposition of the native GaSb oxides is studied using time resolved x-ray photoelectron spectroscopy with a temperature resolution of better than 1 K. The expected transfer of oxygen from Sb-O to Ga-O before the eventual desorption of all oxides is observed. However, an initial reaction resulting in the reduction of Sb2O3 along with the concurrent increase in both Ga2O3 and Sb2O4 is detected in the temperature range of 450-525 K. Using the relative changes in atomic concentrations of the chemical species observed; the initial reaction pathway is proposed. (c) 2014 American Vacuum Society.

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