期刊
JOURNAL OF APPLIED PHYSICS
卷 123, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5028141
关键词
-
资金
- NSF [ECCS-1508854, ECCS-1610992, DMR-1508191, ECCS-1653383]
- ARO [W911NF-15-2-0068, W911NF-16-C-0101]
- AFOSR [FA9550-17-1-0225]
- DOE [DE-SC0011883]
- Japan Society for the Promotion of Science (JSPS) [15H03555]
- Grants-in-Aid for Scientific Research [15H03555] Funding Source: KAKEN
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1508854] Funding Source: National Science Foundation
- U.S. Department of Energy (DOE) [DE-SC0011883] Funding Source: U.S. Department of Energy (DOE)
The average bulk thermal conductivity of free-standing physical vapor transport and hydride vapor phase epitaxy single crystal AIN samples with different impurity concentrations is analyzed using the 3 omega method in the temperature range of 30-325 K. AIN wafers grown by physical vapor transport show significant variation in thermal conductivity at room temperature with values ranging between 268 W/m K and 339 W/m K. AIN crystals grown by hydride vapor phase epitaxy yield values between 298 W/m K and 341 W/m K at room temperature, suggesting that the same fundamental mechanisms limit the thermal conductivity of MN grown by both techniques. All samples in this work show phonon resonance behavior resulting from incorporated point defects. Samples shown by optical analysis to contain carbon-silicon complexes exhibit higher thermal conductivity above 100K. Phonon scattering by point defects is determined to be the main limiting factor for thermal conductivity of AIN within the investigated temperature range. Published by AIP Publishing.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据