期刊
JOURNAL OF APPLIED PHYSICS
卷 123, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.5031772
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资金
- Advanced Research Projects Agency-Energy (ARPA-E) [DE-AR0000672]
- NSF [NSF-ECCS-1408302]
- Multidisciplinary University Research Initiative from the Air Force Office of Scientific Research (AFOSR MURI) [FA9550-12-10488]
We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis. Published by AIP Publishing.
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