相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Electro-Thermal Model of Threshold Switching in TaOx-Based Devices
Jonathan M. Goodwill et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector
Jaehyuk Park et al.
APPLIED PHYSICS LETTERS (2016)
Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells
Manuel Le Gallo et al.
JOURNAL OF APPLIED PHYSICS (2016)
Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model
Carsten Funck et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Dynamics of electroforming in binary metal oxide-based resistive switching memory
Abhishek A. Sharma et al.
JOURNAL OF APPLIED PHYSICS (2015)
Switching mechanism in two-terminal vanadium dioxide devices
Iuliana P. Radu et al.
NANOTECHNOLOGY (2015)
Physical model of threshold switching in NbO2 based memristors
S. Slesazeck et al.
RSC ADVANCES (2015)
Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
Abhishek A. Sharma et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
The gradual nature of threshold switching
M. Wimmer et al.
NEW JOURNAL OF PHYSICS (2014)
Access devices for 3D crosspoint memory
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
Threshold-Switching Delay Controlled by 1/f Current Fluctuations in Phase-Change Memory Devices
Simone Lavizzari et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Transient Simulation of Delay and Switching Effects in Phase-Change Memories
Simone Lavizzari et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Evidence of field induced nucleation in phase change memory
I. V. Karpov et al.
APPLIED PHYSICS LETTERS (2008)
Field-induced nucleation in phase change memory
V. G. Karpov et al.
PHYSICAL REVIEW B (2008)