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Andrea Padovani et al.
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Tz-yi Liu et al.
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M. A. Villena et al.
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M. A. Villena et al.
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Luca Vandelli et al.
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M. A. Villena et al.
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Shibing Long et al.
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Tsuyoshi Hasegawa et al.
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M. Lanza et al.
APPLIED PHYSICS LETTERS (2012)
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Ximeng Guan et al.
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Shimeng Yu et al.
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Stephan Menzel et al.
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Self-consistent physical modeling of set/reset operations in unipolar resistive-switching memories
Marc Bocquet et al.
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Feng Pan et al.
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Richard G. Southwick et al.
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T. Tsuruoka et al.
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Ugo Russo et al.
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RaineR Waser et al.
NATURE MATERIALS (2007)