期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 734, 期 -, 页码 48-54出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.10.293
关键词
Thermoelectric; MOCVD; HRXRD; InGaN; Seebeck effect
资金
- Department of Science and Technology, India [DST/TM/SERI/2k12/71(G)]
- UGC-RGNFSC, Govt. of India [F1-17.1/2015-16/RGNF-2015-17-SC-TAM-5892]
Thermo Electric (TE) properties of InGaN/GaN heterostructure with different Indium compositions grown by Metal Organic Chemical Vapour Deposition (MOCVD) are investigated. Room temperature thermoelectric studies reveals that increasing indium composition (from 6% to 19%) in the InGaN/GaN heterostructure lead to a decrease in Seebeck coefficient (S) due to sharpening of bandgap which in turn increases TE figure of merit. Seebeck coefficient, Power factor and Figure of Merit of the InGaN/GaN heterostructured thin films shows significant enhancement at higher temperature up to 420 K as compared to room temperature measurement. Promising results on the TE properties of as grown InGaN/GaN heterostructures were observed with Figure of Merit (ZT) value of 0.15 at 420 K for In0.19Ga0.81N sample. The results indicate that InGaN material system could be potentially imparted for high temperature TE devices. (c) 2017 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据