期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 735, 期 -, 页码 88-97出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.11.094
关键词
MoS2; Film; Lateral photovoltage; Junction; Interface
资金
- National Natural Science Foundation of China [51502348, 61604100]
- Shandong Natural Science Foundation [ZR2016AM15]
- Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices [KFJJ201606]
- Fundamental Research Funds for the Central Universities [15CX08009A]
Molybdenum disulfide (MoS2) is investigated as one typical kind of two dimensional (2D) materials for developing various kinds of electronic devices. Here, we report a giant lateral photovoltaic effect (LPE) in a MoS2/SiO2/Si p-i-n junction. MoS2 films are deposited on Si substrates using magnetron sputtering technique and a SiO2 layer is incorporated to perform the modification on the MoS2/Si interface. After the first 5-nm-thickness horizontally lying layer on the SiO2 layer, the atomic unit layers of S-Mo-S in the followed MoS2 film are almost perpendicular to the substrate surface and the vertically standing layered structure is formed. Owing to the interface modification of the SiO2 layer and the unique structure of the MoS2 film, a giant LPE is observed in the fabricated junction. The LPE shows a linear dependence on the position of the laser illumination and the considerably large sensitivity of 355.4 mV/mm is obtained with the fast response of 16.2 mu s. The mechanisms to the LPE are unveiled by building the correlation between microstructures, energy-band alignment and optoelectrical properties of the MoS2/SiO2/Si junctions. The excellent LPE characteristics could make MoS2 films combined with SiO2/Si promising candidates for the application of high-performance position sensitive detectors. (C) 2017 Elsevier B.V. All rights reserved.
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