期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 735, 期 -, 页码 718-727出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2017.11.175
关键词
Tungsten oxide (WO3); Porous silicon (PS); Electrochemical deposition; Gas sensor
资金
- National Natural Science Foundation of China [61601327, 61474082]
- Tianjin Natural Science Foundation of China [17JCQNJC01000]
- Tianjin Normal University Doctoral Foundation of China [52XB1416]
Here we prepare a composite of tungsten oxide films/porous silicon (WO3/PS) hybrid structure synthesized by electrochemical deposition of WO3 films onto p-type PS with subsequent annealing process in air. The obtained WO3/PS products were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS). The gas-sensing properties of WO3/PS composite to NO2 ranging from room temperature (RT, similar to 25 degrees C) to 200 degrees C were studied. The result indicated that all the WO3/PS gas sensors showed typical p-type semiconductor behavior and had an optimal working temperature of RT. Furthermore, compared with PS, the proper deposited WO3/PS composite exhibited a higher gas response, shorter response-recovery time, good repeatability and selectivity toward NO2 gas at RT. This improvement probably owing to the heterojunction effect and its unique microstructure properties. In addition, the possible NO2-sensing mechanisms were also discussed in this paper. (C) 2017 Elsevier B.V. All rights reserved.
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