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Materials, processing and reliability of low temperature bonding in 3D chip stacking

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 750, 期 -, 页码 980-995

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.04.040

关键词

3D IC; Low temperature bonding; Bonding method; Reliability

资金

  1. Natural Science Foundation of China [51475220]
  2. Qing Lan Project
  3. China Postdoctoral Science Foundation [2016M591464]
  4. Six talent peaks project in Jiangsu Province [XCL-022]
  5. International Cooperation Project [2015DFA50470]
  6. Major State Research Development Program of China [2017YFB0305500]
  7. Doctor Talent Project of Jiangsu Normal University [14XLR025]

向作者/读者索取更多资源

Due to the advantages of small form factor, high performance, low power consumption, and high density integration, three-dimensional integrated circuits (3D ICs) have been generally acknowledged as the next generation semiconductor technology. Low temperature bonding is the key technology to ensure the chip (or wafer) stacking in 3D ICs. In this paper, different low temperature bonding methods for chip (or wafer) stacking were reviewed and described systematically. Materials, processing and reliability will be extremely important, their effects on the 3D IC structure were addressed in detail, the challenging reliability issues may be considered as the major concern in the future work. The latest development of low temperature bonding in 3D ICs is also given here, which helpful may provide a reference for the further study of low temperature bonding. (C) 2018 Elsevier B.V. All rights reserved.

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