期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 750, 期 -, 页码 980-995出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.04.040
关键词
3D IC; Low temperature bonding; Bonding method; Reliability
资金
- Natural Science Foundation of China [51475220]
- Qing Lan Project
- China Postdoctoral Science Foundation [2016M591464]
- Six talent peaks project in Jiangsu Province [XCL-022]
- International Cooperation Project [2015DFA50470]
- Major State Research Development Program of China [2017YFB0305500]
- Doctor Talent Project of Jiangsu Normal University [14XLR025]
Due to the advantages of small form factor, high performance, low power consumption, and high density integration, three-dimensional integrated circuits (3D ICs) have been generally acknowledged as the next generation semiconductor technology. Low temperature bonding is the key technology to ensure the chip (or wafer) stacking in 3D ICs. In this paper, different low temperature bonding methods for chip (or wafer) stacking were reviewed and described systematically. Materials, processing and reliability will be extremely important, their effects on the 3D IC structure were addressed in detail, the challenging reliability issues may be considered as the major concern in the future work. The latest development of low temperature bonding in 3D ICs is also given here, which helpful may provide a reference for the further study of low temperature bonding. (C) 2018 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据