A power device material of corundum-structured α-Ga2O3 fabricated by MIST EPITAXY® technique

Corundum-structured oxides have been attracting much attention as next-generation power device materials. A corundum-structured alpha-Ga2O3 successfully demonstrated power device operations of Schottky barrier diodes (SBDs) with the lowest on-resistance of 0.1 m Omega cm(2). The SBDs as a mounting device of TO220 also showed low switching-loss properties with a capacitance of 130 pF. Moreover, the thermal resistance was 13.9 degrees C/W, which is comparable to that of the SiC TO220 device (12.5 degrees C/W). On the other hand, corundum-structured alpha-(Rh, Ga)(2)O-3 showed p-type conductivity, which was confirmed by Hall effect measurements. The Hall coefficient, carrier density, and mobility were 8.22 cm(3)/C, 7.6 x 10(17)/cm(3), and 1.0 cm(2)V(-1)s(-1), respectively. These values were acceptable for the p-type layer of pn diodes based on alpha-Ga2O3. (C) 2018 The Japan Society of Applied Physics