期刊
JAPANESE JOURNAL OF APPLIED PHYSICS
卷 57, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.57.033102
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资金
- JSPS KAKENHI [17H03239, 17K18888]
- Japan Power Academy
- Grants-in-Aid for Scientific Research [17H03239, 17K18888] Funding Source: KAKEN
(Y0.77Gd0.23)Ba2Cu3Oy [(Y,Gd)BCO] films were grown on CeO2 buffered R-plane sapphire (R-Al2O3) substrates using trifluoroacetate metal organic deposition (TFA-MOD). Annealing of the CeO2 buffered R-Al2O3 substrates was performed to control the crystallinity and surface morphology of the CeO2 buffer layer. The annealing treatment led to a significant improvement in the crystallinity and surface morphology of the CeO2 buffer layer. A (Y, Gd)BCO film grown on the CeO2 buffer layer with high crystallinity and an atomically flat surface exhibited high self-field (at 77 K) and in-field (at 20 K, 9 T, mu H-0 parallel to c) critical current densities (J(c)). Annealing of the CeO2 buffer layer thus enabled enhancement of not only the self-field J(c) for the (Y, Gd)BCO film but also the in-field J(c). (c) 2018 The Japan Society of Applied Physics
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