期刊
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
卷 32, 期 14, 页码 -出版社
WORLD SCIENTIFIC PUBL CO PTE LTD
DOI: 10.1142/S0217979218501709
关键词
Ion implantation; microelectromechanical systems (MEMS); fabrication
资金
- Changjiang Scholars and Innovative Research Team in University of China [IRT_14R45]
- National Science Fund for Distinguished Young Scholars [51325503]
- National Natural Science Foundation of China [51705408]
- Fundamental Research Funds for the Central Universities [xjj2017017]
- National Key Research and Development Program of China
- National Key Scientific Instrument and Equipment Development Project [2017YFF0104403]
Ion implantation is widely utilized in microelectromechanical systems (MEMS), applied for embedded lead, resistors, conductivity modifications and so forth. In order to achieve an expected device, the principle of ion implantation must be carefully examined. The elementary theory of ion implantation including implantation mechanism, projectile range and implantation-caused damage in the target were studied, which can be regarded as the guidance of ion implantation in MEMS device design and fabrication. Critical factors including implantations dose, energy and annealing conditions are examined by simulations and experiments. The implantation dose mainly determines the dopant concentration in the target substrate. The implantation energy is the key factor of the depth of the dopant elements. The annealing time mainly affects the repair degree of lattice damage and thus the activated elements' ratio. These factors all together contribute to ions' behavior in the substrates and characters of the devices. The results can be referred to in the MEMS design, especially piezoresistive devices.
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