Enhanced thermoelectric properties of Hg-doped Cu2Se

The Cu2-xHgx-Se (x = 0, 0.05, 0.10 and 0.15) nanopowders were fabricated using the hydrothermal synthesis, and then hot-pressed into bulk alloys. The effects of Hg doping on the thermoelectric (TE) properties of Cu2Se were investigated. The electrical resistivities of all the doped samples are lower than that of the nondoped sample due to the induced cation vacancies. For the x = 0.10 and x = 0.15 samples, Seebeck coefficients increase slightly compared with the nondoped sample at higher temperature. Except for the sample of x = 0.05, the thermal conductivities of x = 0.10 and x = 0.15 samples are substantially lower than that of the x = 0.00 sample. As an overall result, the maximum value of ZT, which is the dimensionless TE figure of merit, reaches 1.50 at 600 degrees C for the x = 0.10 sample.