期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
卷 32, 期 6, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4897133
关键词
-
资金
- NSF [ECCS-1307744]
The authors present a study on transfer characteristics of plasma-doped MoS2 transistors with various MoS2 thicknesses and those acquired under different air humidity conditions. The MoS2 thickness-dependent characterization implies that plasma-assisted doping processes induce p-doping to multilayer MoS2 channels through a surface-charge-transferlike mechanism and the effective space-charge layer thickness is estimated to be similar to 22 nm. The humidity-dependent characterization shows that plasma-doped MoS2 transistors exhibit a much more prominent dependence of the transfer characteristics on humidity in comparison with pristine MoS2-based transistors. This is attributed to the plasma-induced dangling bonds or absorbate centers on MoS2 surfaces, which can enhance the absorption of water molecules and result in additional p-doping to MoS2 transistors. This work advances the understanding of the effects of plasma doping processes on the electronic properties of MoS2 and provides important technical insights for making MoS2-based gas and chemical sensors. (C) 2014 American Vacuum Society.
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