期刊
INORGANIC MATERIALS
卷 54, 期 1, 页码 26-31出版社
MAIK NAUKA/INTERPERIODICA/SPRINGER
DOI: 10.1134/S0020168518010168
关键词
surface segregation; gallium nitride films; chemical composition; nonstoichiometry; surface gallium deficiency
The micro-and nanomorphology and local composition of gallium nitride (GaN) films produced by four different procedures have been studied with the aim of detecting autosegregation phenomena. As a result, a complex autosegregation picture has been demonstrated and discussed. Independent of the growth procedure, all of the gallium nitride films have nonstoichiometric chemical compositions (gallium deficiency), with a degree of nonstoichiometry ranging from similar to 0.30 to < 0.10. We discuss the segregation mechanism, which presumably involves predominant selective diffusion of nitrogen atoms to the surface.
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