期刊
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
卷 778-780, 期 -, 页码 971-+出版社
TRANS TECH PUBLICATIONS LTD
DOI: 10.4028/www.scientific.net/MSF.778-780.971
关键词
4H-SiC; GaN; HEMT; UMOSFET
资金
- Advanced Power Device Research Association
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.
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