Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories

Controlling electrochemical processes at interfaces or within thin films at the atomic scale is a key factor for further development of future nanoelectronics and information technology. This aspect becomes even more important considering concepts beyond conventional data storage like neuromorphic and memristive systems, demonstrating learning abilities and allowing logic operations. In redox-based resistive switching memories (ReRAMs), the solid electrolyte thickness varies in the range between few nanometers up to some ten nanometers. Due to the small dimensions, the high electric fields in the order of E similar to 10(8) Vm(-1), and current densities of j similar to 10(9) Acm(-2), the interface regions are dynamically changing as a function of the thermodynamic and operation conditions. The paper presents an overview on the current state-of-the-art knowledge on atomically scaled processes and interactions, focusing on the electrochemical dynamics at the metal/solid-electrolyte interfaces of nanoscaled thin films and quantum effects.