期刊
2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
卷 -, 期 -, 页码 -出版社
IEEE
DOI: 10.1109/MWSYM.2014.6848322
关键词
Low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); monolithic microwave integrated circuits (MMICs); aluminum gallium nitride; gallium nitride; high power amplifier
This work discusses MMICs for the realization of space born multi-Gigabit satellite communication systems. A broadband low-noise amplifier, based on a 50 nm GaAs mHEMT technology, has been developed for Q-band low-noise receivers. The amplifier shows a small-signal gain of 27.5 dB with a gain flatness of +/- 1.2 dB and a noise figure below 2 dB over the entire targeted frequency range between 30 and 50 GHz. For the next generation of E-band transmitter modules, a GaN-based high-power amplifier with a small-signal gain above 15 dB between 70-75 GHz and a saturated output power exceeding 28 dBm at 74 GHz has been developed.
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