4.6 Review

Synthesis, properties and potential applications of two-dimensional transition metal dichalcogenides

期刊

NANO CONVERGENCE
卷 2, 期 -, 页码 -

出版社

SPRINGER
DOI: 10.1186/s40580-015-0048-4

关键词

Two-dimensional materials; Transition metal dichalcogenides; Synthesis; Electronic device; Optoelectronic device; Gas sensing device; Energy storage device

资金

  1. Basic Science Research Program through the National Research Foundation (NRF) of Korea Grant - Ministry of Science, ICT & Future Planning [2012R1A2A1A01002787, 2009-0083540]
  2. Center for Advanced Soft-Electronics as Global Frontier Project through the National Research Foundation (NRF) of Korea Grant - Ministry of Science, ICT & Future Planning [2013M3A6A5073177]
  3. National Research Foundation of Korea [2013M3A6A5073177, 2012R1A2A1A01002787] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

In recent years, 2-dimensional (2D) materials such as graphene and h-BN have been spotlighted, because of their unique properties and high potential applicability. Among these 2D materials, transition metal dichalcogenides (TMDs) have attracted a lot of attention due to their unusual electrical, optical, and mechanical properties. Also, TMDs have virtually unlimited potential in various fields, including electronic, optoelectronic, sensing, and energy storage applications. For these various applications, there are many methods for sample preparation, such as the mechanical, liquid exfoliation and chemical vapor deposition techniques. In this review, we introduce the properties, preparation methods and various applications of TMDs materials.

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