4.5 Article

Development of a Very Low-Noise Cryogenic Preamplifier for Large-Area SiPM Devices

期刊

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 65, 期 4, 页码 1005-1011

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2018.2799325

关键词

Cryogenic electronics; low-noise amplifier; silicon-germanium (SiGe); silicon photomultipliers (SiPMs); transimpedance amplifier (TIA)

资金

  1. NSF, USA [PHY-1314507]
  2. Istituto Nazionale di Fisica Nucleare, Italy
  3. Laboratori Nazionali del Gran Sasso, INFN, Italy
  4. Fermilab, Department of Energy [DE-AC02-07CH11359]

向作者/读者索取更多资源

Silicon photomultipliers (SiPMs) are an excellent candidate for the development of large-area light sensors. Large SiPM-based detectors require low-noise preamplifiers to maximize the signal coupling between the sensor and the read-out electronics. This paper reports on the development of a low-noise transimpedance amplifier sensitive to single-photon signals at cryogenic temperature. The amplifier is used to read-out a 1-cm(2) SiPM with a signal-to-noise ratio in excess of 40.

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