期刊
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 65, 期 1, 页码 280-287出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2017.2772288
关键词
Fault tolerace; field programmable gate arrays; neutron radiation effects; redundancy; static random access memory (SRAM) cells
资金
- I/UCRC Program of the National Science Foundation [1265957]
- Los Alamos Neutron Science Center [NS-2016-7268-F]
Two field-programmable gate array (FPGA) designs are tested for dynamic single event upset (SEU) sensitivity on two different 28-nm static random access memory-based FPGAs-an Intel Stratix V and a Xilinx Kintex 7 FPGA. These designs were tested in both a conventional unmitigated version and a version to tolerate SEUs with feedback triple modular redundancy (TMR). The unmitigated design sensitivity and the low-level device sensitivity were found to be similar between the devices through neutron radiation testing. Results also show that feedback TMR and configuration scrubbing benefit both designs on both FPGAs. While TMR is helpful, the benefit of TMR depends on the design structure and the device architecture. TMR and scrubbing reduced dynamic SEU sensitivity by a factor of 4-54 x.
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