4.5 Article

Dynamic SEU Sensitivity of Designs on Two 28-nm SRAM-Based FPGA Architectures

期刊

IEEE TRANSACTIONS ON NUCLEAR SCIENCE
卷 65, 期 1, 页码 280-287

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2017.2772288

关键词

Fault tolerace; field programmable gate arrays; neutron radiation effects; redundancy; static random access memory (SRAM) cells

资金

  1. I/UCRC Program of the National Science Foundation [1265957]
  2. Los Alamos Neutron Science Center [NS-2016-7268-F]

向作者/读者索取更多资源

Two field-programmable gate array (FPGA) designs are tested for dynamic single event upset (SEU) sensitivity on two different 28-nm static random access memory-based FPGAs-an Intel Stratix V and a Xilinx Kintex 7 FPGA. These designs were tested in both a conventional unmitigated version and a version to tolerate SEUs with feedback triple modular redundancy (TMR). The unmitigated design sensitivity and the low-level device sensitivity were found to be similar between the devices through neutron radiation testing. Results also show that feedback TMR and configuration scrubbing benefit both designs on both FPGAs. While TMR is helpful, the benefit of TMR depends on the design structure and the device architecture. TMR and scrubbing reduced dynamic SEU sensitivity by a factor of 4-54 x.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.5
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据