期刊
IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS
卷 15, 期 9, 页码 4857-4866出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TII.2018.2806933
关键词
High voltage gain; input current ripple; quasi-switched boost inverter; quasi-Z-source inverter; shoot-through (ST)
类别
资金
- Korea Electric Power Corporation [R18XA04]
- National Research Foundation of Korea [22A20130000110] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Two high voltage gain quasi-switched boost inverters (HG-qSBIs) are introduced in this paper. The proposed HG-qSBIs has the following characteristics: 1) continuous input current with low ripple; 2) reduced voltage stress on the capacitor, switch, and diodes; 3) shoot-through immunity; 4) achieved high voltage gain with single-stage conversion; and 5) improve the output voltage capability with using high modulation index. A novel pulse-width modulation control technique is proposed for the introduced HG-qSBI. Operating principle, circuit analysis, and passive component design guideline of the HG-qSBI are addressed. Comparison analysis between the introduced HG-qSBI and other Z-source-based high voltage gain inverters is presented. A prototype is made to test the introduced HG-qSBI. Simulation and experimental verifications are shown to prove the accuracy of the theoretical analysis.
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