Preparation and thermal-sensitive characteristic of copper doped n-type silicon material

Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2 Omega.cm is obtained when the sample is treated at 1200 degrees C for 2 h with the surface concentration of the copper dopant source being 1.83 x 10(-7) mol/cm(2). The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010-4130 K.