期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 1, 页码 207-214出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2773201
关键词
AlGaN/GaN heterojunction; gallium nitride; low-pressure chemical-vapor deposition (LPCVD)-SiNx passivation; metal-insulator-semiconductor high-electronmobility transistors (MIS-HEMT); normally OFF; power diodes; power transistors; recess free; semiconductor device manufacture; silicon substrate; ultrathin barrier (UTB); yield
资金
- National Key Research and Development Program of China [2016YFB0400105]
- Natural Science Foundation of China [61404163, 61474138, 11634002, 61534007, 61527816]
- Key Frontier Project of Chinese Academy of Sciences [QYZDB-SSW-JSC012, Y7YT024002]
- Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences
(Al)GaN recess-free normally OFF technology is developed for fabrication of high-yield lateral GaN-based power devices. The recess-free process is achieved by an ultrathin-barrier (UTB) AlGaN/GaN heterostructure that features a natural pinched-off 2-D electron gas channel. The top-down manufacturing technique overcomes the challenges in etching of AlGaN barrier with well-controlled depth and uniformity, which is especially attractive for fabrication of normally OFF GaN-based high-electron-mobility transistors (HEMTs) and metal-insulator-semiconductor HEMTs (MIS-HEMTs) on large-size Si substrate. With SiNx passivation grown by low-pressure chemical-vapor deposition, on-resistance of the UTB-AlGaN/GaN-based power devices can be significantlyreduced. High-uniformity low-hysteresis normally OFF HEMTs and Al2O3/AlGaN/GaN MIS-HEMTs are successfully demonstrated on the UTB AlGaN/GaN-on-Si platform. It is also a compelling technology platform for manufacturing high-performance GaN-based lateral power diodes, and normally OFF p-(Al) GaN heterojunction field-effect transistors.
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