4.6 Article

3-D Floating-Gate Synapse Array With Spike-Time-Dependent Plasticity

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 1, 页码 101-107

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2775233

关键词

Floating-gate (FG) synapse; neuromorphic device; spike time-dependent plasticity (STDP); synapse device

资金

  1. National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [2016M3A7B4910348]
  2. IC Design Education Center, South Korea

向作者/读者索取更多资源

This paper proposes a 3-D floating-gate (FG) synapse array for neuromorphic applications. The designed device has certain advantages over previous planar FG synapse devices: a smaller cell size due to the stacked structure and smaller operation voltage by the gate-all-around geometry. In addition, the operation method to implement spike time-dependent plasticity is proposed and demonstrated. The proposed array based on commercialized flash memory technology is expected be one of the most promising candidate architecture for neuromorphic applications.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据