期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 8, 页码 3326-3332出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2839180
关键词
JFET; power MOSFET; superjunction
资金
- On Semiconductor Corporation
- EPSRC [EP/L007010/1] Funding Source: UKRI
In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET's specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given cellpitch) has not been carried out yet. When the width of one of the pillar (say n-pillar) is modified, the doping concentration (say donor) should be changed to maintain a charge balance condition. This in turn, changes the width of the depletion region, due to the parasitic JFET effect and as a result the effective onstate conduction path. This raises the question whether the best tradeoff between the specific on-state resistance and the breakdown voltage could be achieved by employing the conventional assumption of the same width of the n and p pillars. This paper clarifies the best option for the width of each pillar when designing a superjunction MOSFET and adapts the figures of merit to take into account the asymmetrical superjunction cell.
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