期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 6, 页码 2565-2572出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2827064
关键词
Breakdown voltage (BV); electric field (E-field) modulation; lateral double diffused (LDMOS); multiple floating buried layers (MFBLs); superjunction (SJ)
资金
- National Basic Research Program of China [2015CB351906]
- National Natural Science Foundation of China [61774114]
- Shaanxi Province Science Foundation for Distinguished Young Scholars
- 111 Project [B12026]
A new theory about terminal technology is proposed for superjunction lateral double-diffused metal oxide-semiconductor field effect transistors with multiple floating buried layers (MFBL SJ-LDMOS) based on the bulk electric field (E-field) modulation in this paper for the first time. A concise and efficient analytical theory is presented to predict the vertical voltage and bulk E-field distributions of MFBL SJ-LDMOS. The analytical formulas for the breakdown voltage (BV) and the vertical peak E-field of MFBL SJ-LDMOS are derived in the closed-form equations, which starts from a single floating buried layer for the vertical E-field modulation, extending this theory to predict the vertical E-field peaks and vertical voltage distributions between the MFBLs. Quantitative analytical description has been given to explain the bulk E-field modulation for the MFBL. Moreover, the optimal spacing and the maximum BV are procedurally predicted. All analytical results are well verified by the 3-D numerical simulations, proving the applicability of the method presented in other power devices with MFBL including MFBL LDMOS, MFBL lateral insulated gate bipolar transistor, and MFBL diode.
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