期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 6, 页码 2446-2453出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2828410
关键词
Buffer doping; carbon; dispersion; dislocations; GaN high-electronmobility transistor (HEMT); iron
资金
- Swedish Defence Materiel Administration
- Swedish Governmental Agency for Innovation Systems
- Swedish Research Council
- Swedish Foundation for Strategic Research
This paper investigates AlGaN/GaN high-electron mobility transistors (HEMTs) fabricated on epistructures with carbon (C)-doped buffers. Metalorganic chemical vapor deposition is used to grow two C-doped structures with different doping profiles, using growth parameters to change the C incorporation. The C concentration is low enough to result in n-type GaN. Reference devices are also fabricated on a structure using iron (Fe) as dopant, to exclude any process related variations and provide a relevant benchmark. All devices exhibit similar dc performance. However, pulsed I-V measurements show extensive dispersion in the C-doped devices, with values of dynamicRON 3-4 times larger than in the dc case. Due to the extensive trapping, the devices with C-dopedbuffers can only supply about half the outputpower of the Fe-doped sample, 2.5 W/mm compared to 4.8 W/mm at 10 GHz. In drain current transient measurements, the trap filling time is varied, finding large prevalence of trapping at dislocations for the C-doped samples. Clusters of C around the dislocations are suggested to be the main cause for the increased dispersion.
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