期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 4, 页码 1383-1390出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2806362
关键词
Amorphous InGaZnO (a-IGZO); Cu-Ca alloy; diffusion barrier; high mobility; stability; thin-film transistors (TFTs)
资金
- Industrial Strategic Technology Development Program - Ministry of Knowledge Economy/Ministry of Energy, Industry and Trade [10048560]
- National Research Foundation of Korea - Korean Government [NRF-2015R1A2A2A01003848]
A thermally stable Ca-doped CuOx (CuCaOx) diffusion barrier to prevent the migration of Cu to amorphous InGaZnO (a-IGZO) was developed by reactive sputtering and subsequent annealing. Insertion of a 5-nm-thick CaCuOx between the Ca-dopedCu (CuCa) and a-IGZO channel films in the source/drain contact regions provided the resulting transistors with superior charge transport and lower trap density compared to the diffusion barrier-free CuCa/a-IGZO transistors. The fabricated a-IGZO transistors with the CuCa/CuCaOx stack contact exhibited a high mobility of 20.8 cm(2)/V.s and an Ion/off ratio of 108. Simultaneously, very stable behavior against the external positive/negate gate bias stress was observed for the a-IGZO thin-film transistors with the CuCa/CuCaOx stack contact. This was attributed to suppression of Cu-related acceptor-like traps due to the conformal formation of CuCaOx film with excellent barrier properties.
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