期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 65, 期 4, 页码 1419-1426出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2018.2803283
关键词
4H-SiC; bias temperature instability; delay time dependence; MOSFET; preconditioning; reliability; threshold voltage shift
资金
- Austrian Research Promotion Agency [860424]
When using JEDEC-like measurement patterns, MOSFETs based on 4H-SiC show amplified voltage shifts during gate bias stress compared to their silicon-based counterparts. We show that the majority of the extracted voltage shift originates from fully reversible components and strongly relies on stress-independent measurement conditions such as the reference point for the calculation of the voltage shift and timing parameters. An enhanced bias temperature instability measurement technique using device preconditioning is presented and compared to standard JEDEC-like measurement patterns developed for bias temperature instability evaluation of silicon MOSFETs. We show that preconditioned measurements allow for accurate and nearly delay and recovery time independent extraction of the permanent component within typical industrial time scales.
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